| PART |
Description |
Maker |
| DB202S |
(DB201S - DB207S) Silicon Bridge Rectifiers
|
Galaxy Semiconductor
|
| SB310 |
Single Phase 3.0 AMPS. Silicon Brid ge Rectifiers
|
Gaomi Xinghe Electronics Co., Ltd.
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| 1N957B 1N959B 1N963B 1N962B 1N960B 1N958B 1N961B |
Silicon Z-Diodes(绋冲??靛?10V锛?ǔ瀹??娴?0mA???榻?撼浜??绠?
Silicon Z-Diodes(稳定电压9.1V，稳定电0mA的硅齐纳二极
Silicon Z-Diodes(稳定电压7.5V，稳定电0mA的硅齐纳二极
From old datasheet system
Silicon Z?Diodes
|
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| 1SMB5953BT3 1SMB5945BT3 1SMB5948BT 1SMB5954BT3 1SM |
PLASTIC SURFACE MOUNT ZENER DIODES 3 WATTS 3.3.200 VOLTS
HEADER,10 CONTACT,1
surface mount silicon Zener diodes 130 V, 0.83 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 3.9 V, 0.83 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.3V / 5V, 160MHz 1:4 Outputs Clock Driver 33 V, 0.83 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 表面贴装硅稳压二极管
surface mount silicon Zener diodes 16 V, 0.83 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 5.1 V, 0.83 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.3V, 140MHz Mobile PC 1:7 Output Clock Driver with Edge Rate Control
CONN TERM BLK GROUNDING 4.2MM
AI10-12BN
ER 24C 24#16 PIN RECP LINE
3 Watt Plastic Surface Mount Silicon Zener Diodes
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA [Motorola, Inc]
MOTOROLA[Motorola, Inc]
|
| 1N5235B 1N5234B 1N5251B 1N5246B 1N5240B 1N5230B 1N |
Silicon Z-Diodes for Voltage Stabilization(绋冲??靛?62V锛?ǔ瀹??娴?.0mA???榻?撼浜??绠?
Silicon Z-Diodes for Voltage Stabilization(稳定电压6.8V，稳定电0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电.8V时，稳定电流20mA的的硅齐纳二极管
Silicon Z-Diodes for Voltage Stabilization(稳定电压62V，稳定电.0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电2V，稳定电流二点○毫安的硅齐纳二极管）
Silicon Z-Diodes for Voltage Stabilization(稳定电压18V，稳定电.0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电18V的稳定电.0毫安的硅齐纳二极管）
Silicon Z-Diodes for Voltage Stabilization(稳定电压36V，稳定电.4mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电6V的，稳定电流三点四毫安的硅齐纳二极管
Silicon Z-Diodes for Voltage Stabilization(稳定电压2.8V，稳定电0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电.8V时，稳定电流20mA的的硅齐纳二极管
Silicon Z-Diodes 硅的Z -二极
Silicon Z-Diodes for Voltage Stabilization(稳定电压4.7V，稳定电0mA的硅齐纳二极
From old datasheet system
Silicon Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| 2N6346A 2N6347A 2N6345A 2N6343A 2N6348A 2N6342A 2N |
12-A silicon triac. 200 V.
12-A silicon triac. 400 V.
12-A silicon triac. 800 V.
12-A silicon triac. 600 V.
|
General Electric Solid State
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BYP35A0506 BYP35A05 BYP35A1 BYP35A2 BYP35A3 BYP35A |
35 A, 300 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 50 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 100 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 600 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 200 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 400 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
Silicon Press-Fit-Diodes
|
Semikron International
|
|
